egp10a-egp10k epg10a - epg10k, rev. c ? 2001 fairchild semiconductor corporation egp10a - egp10k fast rectifiers (glass passivated) absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. electrical characteristics t a = 25c unless otherwise noted features ? superfast recovery time for high efficiency. ? low forward voltage, high current capability. ? low leakage current. ? high surge current capability. do-41 color band denotes cathode thermal characteristics symbol parameter value units p d power dissipation 2.5 w r ja thermal resistance, junction to ambient 50 c/w symbol parameter device units 10a 10b 10c 10d 10f 10g 10j 10k v f forward voltage @ 1.0 a 0.95 1.25 1.7 v t rr reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a 50 75 ns i r reverse current @ rated v r t a = 25 c t a = 125 c 5.0 100 a a c t total capacitance v r = 4.0 v, f = 1.0 mhz 22 15 pf symbol parameter value units 10a 10b 10c 10d 10f 10g 10j 10k v rrm maximum repetitive reverse voltage 50 100 150 200 300 400 600 800 v i f(av) average rectified forward current, .375 " lead length @ t l = 55 c 1.0 a i fsm non-repetitive peak forward surge current 8.3 ms single half-sine-wave 30 a t stg storage temperature range -65 to +150 c t j operating junction temperature -65 to +150 c
epg10a - epg10k, rev. c egp10a-egp10k ? 2001 fairchild semiconductor corporation typical characteristics pulse generator (note 2) 50 ? noninductive 50 ? noninductive dut (-) (+) oscilloscope (note 1) 50 ? noninductive 50v (approx) notes: 1. rise time = 7.0 ns max; input impedance = 1.0 megaohm 22 pf. 2. rise time = 10 ns max; source impedance = 50 ohms. reverse recovery time characterstic and test circuit diagram 1.0cm set time base for trr +0.5a 0 -0.25a -1.0a 5/ 10 ns/ cm 1 2 5 10 20 50 100 0 5 10 15 20 25 30 number of cycles at 60hz peak forward surge current, i fsm [a] 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.01 0.1 1 10 50 forward voltage, v f [v] forward current, i f [a] pulse width = 300 ? s 2% duty cycle t = 25 c o a egp10a-egp10d egp10f-egp10k t = 150 c o a 0 20406080100120140 0.01 0.1 1 10 100 1000 percent of rated peak reverse voltage [%] reverse current, i r [ma] t = 2 5 c o a t = 100 c o a t = 125 c o a 0.1 1 10 100 1000 0 10 20 30 40 50 60 reverse voltage, v r [v] total capacitance, c t [pf] egp10f-egp10k egp10a-egp10d 25 50 75 100 125 150 175 0 0.25 0.5 0.75 1 l ea d t em pe ra tu re [ o c ] average rectified forward current, i f [a] single phase half wave 60hz resistive or inductive load .375" (9.0mm) lead lengths figure 1. forward current derating curve figure 2. non-repetitive surge current figure 3. forward voltage characteristics figure 4. reverse current vs reverse voltage figure 5. total capacitance
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